inchange semiconductor isc product specification isc website www.iscsemi.cn isc thyristors TIC126N applications 12a contimunous on-state current 100a surge-current glass passivated max i gt of 20ma absolute maximum ratings(t a =25 ) symbol parameter min unit v drm repetitive peak off-state voltage 800 v v rrm repetitive peak reverse voltage 800 v i t(av) on-state current tc=80 7.5 a i t(rms) rms on-state current tc=80 12 a i tm surge peak on-state current 100 a p gm peak gate power p w 300 s 5 w p g(av) average gate power 1 w t j operating junction temperature 110 t stg storage temperature -40 ~+125 r th(j-c) thermal resistance, junction to case 2.4 /w r th(j-a) thermal resistance, junction to ambient 62.5 /w electrical characteristics (t c =25 unless otherwise specified) symbol parameter conditions min typ. max unit i rrm repetitive peak reverse current v rm =v rrm , tj=110 2.0 ma i drm repetitive peak off-state current v rm =v rrm , tj=110 2.0 ma v tm on-state voltage i tm = 12a 1.4 v i gt gate-trigger current v aa =6v; r l =100 20 ma v gt gate-trigger voltage v aa =6v; r l =100 1.5 v i h holding current v aa =6v; r gk =1k ,i t =100ma 40 ma
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